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  rev.3.00, dec.21. 2004, page 1 of 19 hn58x2408fpiag/hn58x2416fpiag hn58x2432fpiag/hn58x2464fpiag two-wire serial interface 8k eeprom (1-kword 8-bit)/16k eeprom (2-kword 8-bit) 32k eeprom (4-kword 8-bit)/64k eeprom (8-kword 8-bit) rej03c0134-0300 rev.3.00 dec.21.2004 description hn58x24xxfpiag series are two-wire serial in terface eeprom (electrically erasable and programmable rom). they realize high speed, low power consumption and a high level of reliability by employing advanced mnos memory technology and cm os process and low voltage circuitry technology. they also have a 32-byte page programming f unction to make their write operation faster. features ? single supply: 1.8 v to 5.5 v ? two-wire serial interface (i 2 c tm serial bus* 1 ) ? clock frequency: 400 khz ? power dissipation: ? standby: 3 a (max) ? active (read): 1 ma (max) ? active (write): 3 ma (max) ? automatic page write: 32-byte/page ? write cycle time: 10 ms (2.7 v to 5.5 v)/15ms (1.8 v to 2.7 v) ? endurance: 10 5 cycles (page write mode) ? data retention: 10 years ? small size packages: sop-8pin ? shipping tape and reel: 2,500 ic/reel ? temperature range: ? 40 to +85 c ? lead free products. note: 1. i 2 c is a trademark of philips corporation.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 2 of 19 ordering information type no. internal organization operating voltage frequency package HN58X2408FPIAGE 8k bit (1024 8-bit) 1.8 v to 5.5 v 400 khz 150 mil 8-pin plastic sop hn58x2416fpiage 16k bit (2048 8-bit) (fp-8dbv) hn58x2432fpiage 32k bit (4096 8-bit) lead free hn58x2464fpiage 64k bit (8192 8-bit) pin arrangement 1 2 3 4 8 7 6 5 a0 a1 a2 v ss v cc wp scl sda (top view) 8-pin sop pin description pin name function a0 to a2 device address scl serial clock input sda serial data input/output wp write protect v cc power supply v ss ground
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 3 of 19 block diagram control logic high voltage generator address generator x decoder y decoder memory array y-select & sense amp. serial-parallel converter v cc v ss wp a0, a1, a2 scl sda absolute maximum ratings parameter symbol value unit supply voltage relative to v ss v cc ? 0.6 to +7.0 v input voltage relative to v ss vin ? 0.5 * 2 to +7.0 * 3 v operating tem perature range * 1 topr ? 40 to +85 c storage temperature range tstg ? 65 to +125 c notes: 1. including electrical c haracteristics and data retention. 2. vin (min): ? 3.0 v for pulse width 50 ns. 3. should not exceed v cc + 1.0 v. dc operating conditions parameter symbol min typ max unit supply voltage v cc 1.8 ? 5.5 v v ss 0 0 0 v input high voltage v ih v cc 0.7 ? v cc + 1.0 v input low voltage v il ? 0.3 * 1 ? v cc 0.3 v operating temperature topr ? 40 ? +85 c note: 1. v il (min): ? 1.0 v for pulse width 50 ns.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 4 of 19 dc characteristics (ta = ? 40 to +85 c, v cc = 1.8 v to 5.5 v) parameter symbol min typ max unit test conditions input leakage current i li ? ? 2.0 a v cc = 5.5 v, vin = 0 to 5.5 v output leakage current i lo ? ? 2.0 a v cc = 5.5 v, vout = 0 to 5.5 v standby v cc current i sb ? 1.0 3.0 a vin = v ss or v cc read v cc current i cc1 ? ? 1.0 ma v cc = 5.5 v, read at 400 khz write v cc current i cc2 ? ? 3.0 ma v cc = 5.5 v, write at 400 khz output low voltage v ol2 ? ? 0.4 v v cc = 4.5 to 5.5 v, i ol = 1.6 ma v cc = 2.7 to 4.5 v, i ol = 0.8 ma v cc = 1.8 to 2.7 v, i ol = 0.4 ma v ol1 ? ? 0.2 v v cc = 1.8 to 2.7 v, i ol = 0.2 ma capacitance (ta = +25 c, f = 1 mhz) parameter symbol min typ max unit test conditions input capacitance (a0 to a2, scl, wp) cin * 1 ? ? 6.0 pf vin = 0 v output capacitance (sda) c i/o * 1 ? ? 6.0 pf vout = 0 v note: 1. this parameter is sampled and not 100% tested.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 5 of 19 ac characteristics (ta = ? 40 to +85 c, v cc = 1.8 to 5.5 v) test conditions ? input pules levels: ? v il = 0.2 v cc ? v ih = 0.8 v cc ? input rise and fall time: 20 ns ? input and output timing reference levels: 0.5 v cc ? output load: ttl gate + 100 pf parameter symbol min typ max unit notes clock frequency f scl ? ? 400 khz clock pulse width low t low 1200 ? ? ns clock pulse width high t high 600 ? ? ns noise suppression time t i ? ? 50 ns 1 access time t aa 100 ? 900 ns bus free time for next mode t buf 1200 ? ? ns start hold time t hd.sta 600 ? ? ns start setup time t su.sta 600 ? ? ns data in hold time t hd.dat 0 ? ? ns data in setup time t su.dat 100 ? ? ns input rise time t r ? ? 300 ns 1 input fall time t f ? ? 300 ns 1 stop setup time t su.sto 600 ? ? ns data out hold time t dh 50 ? ? ns write cycle time v cc = 2.7 v to 5.5 v t wc ? ? 10 ms 2 v cc = 1.8 v to 2.7 v t wc ? ? 15 ms 2 notes: 1. this parameter is sampled and not 100 % tested. 2. t wc is the time from a stop condition to the end of internally controlled write cycle.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 6 of 19 timing waveforms bus timing t f 1/f scl t high t su.sta t hd.sta t hd.dat t su.dat t su.sto t buf t dh t aa t low t r scl sda (in) sda (out) write cycle timing scl sda d0 in write data ack (address (n)) t wc (internally controlled) stop condition start condition
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 7 of 19 pin function serial clock (scl) the scl pin is used to control seri al input/output data timing. the scl input is used to positive edge clock data into eeprom device and ne gative edge clock data out of each device. maximum clock rate is 400 khz. serial input/output data (sda) the sda pin is bidirectional for serial data transfer. the sda pin needs to be pulled up by resistor as that pin is open-drain driven structure. use proper resistor value for your system by considering v ol , i ol and the sda pin capacitance. except for a start condition and a stop condition which will be discussed later, the sda transition needs to be completed during the scl low period. data validity (sda data change timing waveform) scl sda data change data change note: high-to-low and low-to-high change of sda should be done during the scl low period.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 8 of 19 device address (a0, a1, a2) eight devices can be wired for one common data bus lin e as maximum. device address pins are used to distinguish each device a nd device address pins s hould be connected to v cc or v ss . when device address code provided from sda pin matches corresponding hard-wired device address pins a0 to a2, that one device can be activated. as for 8k to 16k eeprom, whole or some device address pins don't need to be fixed since device address code provided from the sda pin is used as memory address signal. pin connections for a0 to a2 pin connection memory size max connect number a2 a1 a0 notes 8k bit 2 v cc /v ss * 1 * 2 use a0, a1 for memory address a8 and a9 16k bit 1 use a0, a1, a2 for memory address a8, a9 and a10 32k bit 8 v cc /v ss v cc /v ss v cc /v ss 64k bit 8 v cc /v ss v cc /v ss v cc /v ss notes: 1. ?v cc /v ss ? means that device address pin should be connected to v cc or v ss . 2. = don?t care (open is also approval.) write protect (wp) when the write protect pin (wp) is high, the write protection feature is enabled and operates as shown in the following table. when the wp is low, write operation for all memory arrays are allowed. the read operation is always activated irrespective of the wp pin status. wp should be fixed high or low during operations since wp does not provide a latch function. write protect area write protect area wp pin status 8k bit 16k bit 32k bit 64k bit v ih upper 1/2 (4k bit) upper 1/2 (8k bit) upper 1/4 (8k bit) upper 1/4 (16k bit) v il normal read/write operation
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 9 of 19 functional description start condition a high-to-low transition of the sda with the scl high is needed in order to start read, write operation (see start condition and stop condition). stop condition a low-to-high transition of the sda with the scl high is a stop condition. the stand-by operation starts after a read sequence by a stop condition. in the case of write operation, a stop condition terminates the write data inputs and place the device in a internally -timed write cycle to the memories. after the internally-timed write cycle which is specified as t wc , the device enters a standby mode (see write cycle timing). start condition and stop condition scl sda (in) stop condition start condition
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 10 of 19 acknowledge all addresses and data words are serially transmitted to and from in 8-bit words. the receiver sends a zero to acknowledge that it has received each word. this happens during nint h clock cycle. the transmitter keeps bus open to receive acknowledgment from the receive r at the ninth clock. in the write operation, eeprom sends a zero to acknowledge after receiving ever y 8-bit words. in th e read operation, eeprom sends a zero to acknowledge after receiving the devi ce address word. after sending read data, the eeprom waits acknowledgment by keeping bus open. if the eeprom receives zero as an acknowledge, it sends read data of next address. if the eeprom receives acknowledgment "1" (no acknowledgment) and a following stop condition, it stops the read operation and enters a stand-by mode. if the eeprom receives neither acknowledgment "0" nor a stop cond ition, the eeprom keeps bus open without sending read data. acknowledge timing waveform scl sda in sda out 12 8 9 acknowledge out
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 11 of 19 device addressing the eeprom device requires an 8-bit device address word following a start condition to enable the chip for a read or a write operation. the device address wo rd consists of 4-bit device code, 3-bit device address code and 1-bit read/write(r/w) code. the most significant 4-bit of the device address word are used to distinguish device type and this eeprom uses ?1010? fixed code. the device address word is followed by the 3-bit device address code in the order of a2 , a1, a0. the device address code selects one device out of all devices which are connected to the bus. this means that the device is selected if the inputted 3- bit device address code is equal to the corresponding hard-wired a2-a0 pin status. as for the 8kbit and 16kbit eeproms, whole or some bits of their device address code may be used as the memory address bits. for example, a0 and a1 are used as a8 a nd a9 for the 8kbit. the 16kbit doesn't use the device address code instead all 3 bits are used as the memory address bits a8, a9 and a10. the eighth bit of the device address word is the read/write(r/w) bit. a write operation is initiated if this bit is low and a read operation is initiated if this bit is high. upon a co mpare of the device address word, the eeprom enters the read or write operation after outputting the zero as an acknowledge. the eeprom turns to a stand-by state if the device code is not ?1010? or device addre ss code doesn?t coincide with status of the correspond hard-wired device address pins a0 to a2. device address word device address word (8-bit) device code (fixed) device address code * 1 r/w code * 2 32k, 64k 1 0 1 0 a2 a1 a0 r/w 8k 1 0 1 0 a2 a9 a8 r/w 16k 1 0 1 0 a10 a9 a8 r/w notes: 1. a2 to a0 are device address and a10 to a8 are memory address. 2. r/w=?1? is read and r/w = ?0? is write.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 12 of 19 write operations byte write: a write operation requires an 8-bit device address word with r/w = ?0?. then the eeprom sends acknowledgment "0" at the ninth cloc k cycle. after these, the 8kb it to 16kbit eeproms receive 8-bit memory address word, on the other hand the 32kb it and 64kbit eeproms receive 2 sequence 8-bit memory address words. upon receipt of this me mory address, the eeprom outputs acknowledgment "0" and receives a following 8-bit write data. af ter receipt of write data, the eeprom outputs acknowledgment "0". if the eeprom receives a stop c ondition, the eeprom enters an internally-timed write cycle and terminates receipt of scl, sda i nputs until completion of the write cycle. the eeprom returns to a standby mode after completion of the write cycle. byte write operation 8k to 16k device address memory address (n) write data (n) device address 1st memory address (n) 2nd memory address (n) write data (n) start stop 32k to 64k 1010 1010 w w a7 a6 a5 a4 a3 a2 a1 a0 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d7 d6 d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 stop start ack ack ack ack ack r/w ack r/w * 1 * 1 * 1 * 2 notes: 1. don? care bits for 32k and 64k. 2. don? care bit for 32k.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 13 of 19 page write: the eeprom is capable of the page write operation which allows any number of bytes up to 32 bytes to be written in a single write cycle. the page write is the same sequence as the byte write except for inputting the more write data. the page write is initiated by a start condition, device address word, memory address(n) and write data(dn) with every ninth bit acknowledgment. the eeprom enters the page write operation if the eeprom receives more write data(dn+1) instead of receiving a stop condition. the a0 to a4 address bits are automatically incremented upon receivi ng write data(dn+1). the eeprom can continue to receive write data up to 32 bytes. if the a0 to a4 address bits reach es the last address of the page, the a0 to a4 address bits will roll over to the first address of the same page and previous write data will be overwritten. upon receiving a stop condition, the eeprom stops receiving write data and enters internally-timed write cycle. page write operation device address memory address (n) write data (n+m) write data (n) 8k to 16k 1010 w a7 a6 a5 a4 a3 a2 a1 a0 d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 stop start ack ack ack r/w ack notes: 1. don? care bits for 32k and 64k. 2. don? care bit for 32k. device address 1st memory address (n) 2nd memory address (n) write data (n+m) write data (n) 32k to 64k 1010 w a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d7 d6 d5 d4 d3 d2 d1 d0 d5 d4 d3 d2 d1 d0 stop start ack ack ack ack ack r/w * 1 * 1 * 1 * 2
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 14 of 19 acknowledge polling: acknowledge polling feature is used to show if the eep rom is in a internally- timed write cycle or not. this feature is initiated by the stop condition after inputting write data. this requires the 8-bit device address word following the start condition during a inte rnally-timed write cycle. acknowledge polling will operate when the r/w code = ?0?. acknowledgment ?1? (no acknowledgment) shows the eeprom is in a internally-timed write cycle and acknowledgment ?0? shows that the internally-timed write cycle has completed. see write cycle polling using ack. write cycle polling using ack send write command send stop condition to initiate write cycle send start condition send device address word with r/w = 0 send memory address send start condition send stop condition send stop condition proceed random address read operation proceed write operation next operation is addressing the memory ye s ye s no no ack returned
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 15 of 19 read operation there are three read operations: current address read , random read, and sequential read. read operations are initiated the same way as write operations with the exception of r/w = ?1?. current address read: the internal address counter maintains the last addr ess accessed during the last read or write operation, with incremented by one. current address read accesses the address kept by the in ternal address counter. after receiving a start condition and the device address word(r/w is ?1?), the eeprom outputs the 8-bit current address data from the most significant bit following acknowledgment ?0?. if the eeprom receives acknowledgment ?1? (no acknowledgment) a nd a following stop condition, the eeprom stops the read operation and is turned to a standby state. in case the eeprom has accessed the last address of the last page at previous read operation, the current address will roll over and returns to zero address. in case the eeprom has accessed the last address of the page at previous write opera tion, the current address will roll over within page addressing and returns to the first address in the same page. the current address is valid while power is on. the current address after power on will be indefinite. the random read operation described below is necessary to define the memory address. current address read operation 8k to 64k device address read data (n+1) start stop 1010 r d7 d6 d5 d4 d3 d2 d1 d0 ack no ack r/w * 1 * 2 * 3 notes: 1. don? care bit for 16k. 2. don? care bits for 8k and 16k. 3. don? care bits for 4k, 8k and 16k.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 16 of 19 random read: this is a read operation with defined read address. a random read requires a dummy write to set read address. the eeprom receives a start condition, de vice address word(r/w=0) and memory address (8- bit for 8kbit to 16kbit eeproms, 2 8-bit for 32kbit and 64kbit eeproms) sequentially. the eeprom outputs acknowledgment ?0? after recei ving memory address then enters a current address read with receiving a start condition. the eeprom outputs the read data of the address which was defined in the dummy write operation. after receiving acknowle dgment ?1?(no acknowledgment) and a following stop condition, the eeprom stops the random read operation and returns to a standby state. random read operation device address device address memory address (n) read data (n) 8k to 16k 1010 1010 @@@ @@@ ### wr a7 a6 a5 a4 a3 a2 a1 a0 d5 d6 d7 d4 d3 d2 d1 d0 start start ack ack r/w ack r/w notes: 1. don? care bits for 32k and 64k. 2. don? care bit for 32k. 3. 2nd device address code (#) should be same as 1st (@). device address device address 1st memory address (n) 2nd memory address (n) read data (n) 32k to 64k 1010 ### 1010 r w a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d7 d6 d5 d4 d3 d2 d1 d0 stop start start ack ack no ack stop no ack ack r/w ack r/w * 1 * 1 * 1 * 2 dummy write dummy write currect address read currect address read
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 17 of 19 sequential read: sequential reads are initiated by eith er a current address read or a random read. if the eeprom receives acknowledgment ?0? after 8-bit read data, the read addre ss is incremented and the next 8-bit read data are coming out. this operation can be continued as long as the eeprom receives acknowledgment ?0?. the address will roll over and returns address zero if it reaches the last address of the last page. the sequential read can be continued after roll over. the seque ntial read is terminated if the eeprom receives acknowledgment ?1? (no acknowledgment) and a following stop condition. sequential read operation device address read data (n+m) read data (n) read data (n+1) read data (n+2) 8k to 64k 1010 r d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 stop start ack ack no ack ack r/w ack
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 18 of 19 notes data protection at v cc on/off when v cc is turned on or off, noise on the scl and sda inputs generated by external circuits (cpu, etc) may act as a trigger and turn the eeprom to unintentional program mode. to prevent this unintentional programming, this eeprom has a power on reset function. be careful of the notices described below in order for the power on reset function to operate correctly. ? scl and sda should be fixed to v cc or v ss during v cc on/off. low to high or high to low transition during v cc on/off may cause the trigger for the unintentional programming. ? v cc should be turned off after the eep rom is placed in a standby state. ? v cc should be turned on from the ground level(v ss ) in order for the eeprom not to enter the unintentional programming mode. ? v cc turn on speed should be longer than 10 s. write/erase endurance and data retention time the endurance is 10 5 cycles in case of page programming and 10 4 cycles in case of byte programming (1 % cumulative failure rate). the data retention time is more than 10 years when a device is page-programmed less than 10 4 cycles. noise suppression time this eeprom have a noise suppression function at scl and sda inputs, that cut noise of width less than 50 ns. be careful not to allow noise of width more than 50 ns.
hn58x2408/hn58x2416/hn58x 2432/hn58x2464fpiag rev.3.00, dec.21. 2004, page 19 of 19 package dimensions HN58X2408FPIAGE/hn58x2416fpiage/hn58x2432fpiage/hn58x2464fpiage (fp-8dbv) package code jedec jeita mass (reference value) fp-8dbv 0.08 g *pd plating 0 ? ?8 ? 1.27 8 5 14 0.10 0.25 m 1.73 max 3.90 4.89 0.14 + 0.114 ?0.038 0.69 max 6.02 ?0.18 0.60 + 0.289 ?0.194 1.06 *0.40 ?0.05 *0.20 ?0.05 5.15 max unit: mm
revision history hn58x2408fpiag/hn58x2416fpiag/ hn58x2432fpiag/hn58x2464fpiag data sheet contents of modification rev. date page description 1.0 mar. 30, 2001 ? initial issue 2.00 oct. 24, 2003 ? ? 2 19 change format issued by renesas technology corp. deletion of preliminary ordering information addition of hn58x2408f piage, hn58x2416fpiage, hn58x2432fpiage, hn58x2464fpiage package dimensions fp-8db to fp-8db, fp-8dbv 3.00 dec.21.2004 2 19 ordering information deletion of hn58x2408fpiag, hn58x2416fpiag, hn58x2432fpiag, hn58x2464fpiag package dimensions deletion of fp-8db
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon 2.0


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